Invention Grant
- Patent Title: Semiconductor device and multilayer substrate therefor
- Patent Title (中): 半导体装置及其多层基板
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Application No.: US11085520Application Date: 2005-03-22
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Publication No.: US07692296B2Publication Date: 2010-04-06
- Inventor: Naotaka Tanaka , Kenya Kawano , Akira Nagai , Koji Tasaki , Masaaki Yasuda
- Applicant: Naotaka Tanaka , Kenya Kawano , Akira Nagai , Koji Tasaki , Masaaki Yasuda
- Applicant Address: JP
- Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee: Hitachi Chemical Company, Ltd.
- Current Assignee Address: JP
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2004-082704 20040322
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
A semiconductor device is provided with connection reliability between a bump electrode and a substrate electrode. An elastic modulus of an adhesive material used to electrically connect a metal bump and an interconnect pattern, and sealing the circuit surface of an LSI chip, after thermosetting is Ea; an elastic modulus of an insulating material of a packaging substrate surface layer after thermosetting is Eb; an elastic modulus of a core material, if used, is Ec, and the following rational expression is satisfied at normal temperature or a thermal contact bonding temperature of the adhesive material: at least Ea
Public/Granted literature
- US20050230826A1 Semiconductor device and multilayer substrate therefor Public/Granted day:2005-10-20
Information query
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