Invention Grant
- Patent Title: SIP semiconductor device and method for manufacturing the same
- Patent Title (中): SIP半导体器件及其制造方法
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Application No.: US12424003Application Date: 2009-04-15
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Publication No.: US07692302B2Publication Date: 2010-04-06
- Inventor: Han-Choon Lee
- Applicant: Han-Choon Lee
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2006-0068991 20060724
- Main IPC: H01L21/44
- IPC: H01L21/44
Abstract:
A System In Package (SIP) semiconductor device and a method for manufacturing a SIP device. A TiSiN film may be used as a diffusion barrier film for metal wiring in a SIP semiconductor device. A TiSiN film may provide relatively good step coverage in a relatively easy formation process, which may maximize reliability of a semiconductor device.
Public/Granted literature
- US20090200671A1 SIP SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-08-13
Information query
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