Invention Grant
- Patent Title: Forming a hybrid device
- Patent Title (中): 形成混合设备
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Application No.: US11389860Application Date: 2006-03-27
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Publication No.: US07692310B2Publication Date: 2010-04-06
- Inventor: Chang-Min Park , Shriram Ramanathan
- Applicant: Chang-Min Park , Shriram Ramanathan
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Trop, Pruner & Hu, P.C.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/538

Abstract:
In one embodiment, the present invention includes a hybrid device having a first die including a semiconductor device and a second die coupled to the first die, where the second die includes a magnetic structure. The first die may be a semiconductor substrate, while the second die may be a magnetic substrate, and the first die may be stacked on the second die, in one embodiment. Other embodiments are described and claimed.
Public/Granted literature
- US20070221961A1 Forming a hybrid device Public/Granted day:2007-09-27
Information query
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