Invention Grant
- Patent Title: Semiconductor device and method for manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11055652Application Date: 2005-02-11
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Publication No.: US07692315B2Publication Date: 2010-04-06
- Inventor: Kenichi Watanabe , Masanobu Ikeda , Takahiro Kimura
- Applicant: Kenichi Watanabe , Masanobu Ikeda , Takahiro Kimura
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Microelectronics Limited
- Current Assignee: Fujitsu Microelectronics Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2002-256152 20020830
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40

Abstract:
In a pad forming region electrically connecting an element forming region to the outside, in which a low dielectric constant insulating film is formed in association with in the element forming region, a Cu film serving as a via formed in the low dielectric constant insulating film in the pad forming region is disposed in higher density than that of a Cu film serving as a via in the element forming region. Hereby, when an internal stress occurs, the stress is prevented from disproportionately concentrating on the via, and deterioration of a function of a wiring caused thereby can be avoided.
Public/Granted literature
- US20050146041A1 Semiconductor device and method for manufacturing the same Public/Granted day:2005-07-07
Information query
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