Invention Grant
- Patent Title: Backscatter sensor
- Patent Title (中): 反向散射传感器
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Application No.: US11940005Application Date: 2007-11-14
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Publication No.: US07692358B2Publication Date: 2010-04-06
- Inventor: Terje Kvisteroy , Reidar Holm , Sverre Horntvedt
- Applicant: Terje Kvisteroy , Reidar Holm , Sverre Horntvedt
- Applicant Address: NO Horten
- Assignee: Infineon Technologies Sensonor AS
- Current Assignee: Infineon Technologies Sensonor AS
- Current Assignee Address: NO Horten
- Agency: Edell, Shapiro & Finnan, LLC
- Priority: EP06124075 20061114
- Main IPC: H01L41/107
- IPC: H01L41/107

Abstract:
A micro mechanical backscatter sensor includes a receiver for receiving a modulated electromagnetic signal, a capacitive element operatively connected to the receiver, the capacitive element being arranged such that a voltage is generated across the capacitor in response to the frequency of the received signal, and a resonator operatively connected to the capacitive element such that electrostatic forces that are induced by the voltage generated cause the resonator to vibrate at a resonance frequency, the resonator being arranged such that an applied external force alters the resonance frequency of vibration. The sensor further includes a demodulator for demodulating the received signal, a modulator for modulating a carrier signal of the received signal by mixing the carrier signal with the resonance frequency of the resonator to produce a modulated electromagnetic transmission signal, and a transmitter, operatively connected to the capacitive element and arranged to transmit the modulated transmission signal.
Public/Granted literature
- US20080224568A1 Backscatter Sensor Public/Granted day:2008-09-18
Information query
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