Invention Grant
- Patent Title: Apparatus for detecting a current and temperature for an integrated circuit
- Patent Title (中): 用于检测集成电路的电流和温度的装置
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Application No.: US11281142Application Date: 2005-11-17
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Publication No.: US07692442B2Publication Date: 2010-04-06
- Inventor: Chung-Hui Chen
- Applicant: Chung-Hui Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: K&L Gates LLP
- Main IPC: G01R31/26
- IPC: G01R31/26

Abstract:
The present invention discloses an apparatus for detecting a current flowing from a first node to a second node. One or more MOS devices are serially coupled between the first and second nodes. Each of the MOS devices has its body connected to its source and its gate connected to its drain for providing each MOS device with a voltage difference between its gate and its source that is lower than a threshold voltage of the same, such that a voltage difference measured between the first and second nodes responds to a change of the current exponentially.
Public/Granted literature
- US20070159208A1 Apparatus for detecting a current and temperature for an integrated circuit Public/Granted day:2007-07-12
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