Invention Grant
- Patent Title: Semiconductor chip and power gating method thereof
- Patent Title (中): 半导体芯片及其电源门控方法
-
Application No.: US11826366Application Date: 2007-07-13
-
Publication No.: US07692452B2Publication Date: 2010-04-06
- Inventor: Hoi-Jin Lee
- Applicant: Hoi-Jin Lee
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0066525 20060714
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A semiconductor chip may include an internal circuit, at least one power gating transistor, a system manager, and/or at least one current regulator. The at least one power gating transistor may be configured to switch a supply of at least one drive voltage into the internal circuit. The system manager may be configured to generate a control signal corresponding to an activation state of the internal circuit. At least one current regulator may be configured to control an amount of a current flowing through the at least one power gating transistor in response to the control signal.
Public/Granted literature
- US20080024205A1 Semiconductor chip and power gating method thereof Public/Granted day:2008-01-31
Information query