A high-frequency switching circuit includes, on a semiconductor substrate, FETs, electrode pads for applying a control voltage, gate wiring patterns for connecting gate terminals of the FETs to the electrode pads, and first resistors and second resistors connected in series with the gate wiring patterns. The first resistors are connected in series near the gate terminals of the FETs. The second resistors are connected in series near the electrode pads. The resistances of the first resistors and the second resistors are set to values large enough to inhibit the influence of an induced high frequency signal.