Invention Grant
US07692473B2 Switch circuits with the ability to control latch-up due to a parasitic element
有权
开关电路具有控制由寄生元件引起的闭锁的能力
- Patent Title: Switch circuits with the ability to control latch-up due to a parasitic element
- Patent Title (中): 开关电路具有控制由寄生元件引起的闭锁的能力
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Application No.: US11642790Application Date: 2006-12-21
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Publication No.: US07692473B2Publication Date: 2010-04-06
- Inventor: Takashi Ono
- Applicant: Takashi Ono
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-379474 20051228
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
In a conventional switch circuit capable of bidirectional conductivity, there is the problem that latch-up occurs in a parasitic thyristor included in a transistor having a switching function. Therefore it is an object of the present invention to provide a switch circuit capable of bidirectional conductivity while suppressing the occurrence of latch-up due to a parasitic thyristor. The present invention provides a switch circuit that includes diodes connected in parallel with each of a MOS transistor having the switching function and parasitic diodes present at the source and the drain of the MOS transistor.
Public/Granted literature
- US20070146953A1 Switch circuit and diode Public/Granted day:2007-06-28
Information query
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