Invention Grant
US07692474B2 Control circuit for a high-side semiconductor switch for switching a supply voltage
失效
用于切换电源电压的高侧半导体开关的控制电路
- Patent Title: Control circuit for a high-side semiconductor switch for switching a supply voltage
- Patent Title (中): 用于切换电源电压的高侧半导体开关的控制电路
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Application No.: US12126405Application Date: 2008-05-23
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Publication No.: US07692474B2Publication Date: 2010-04-06
- Inventor: Thomas Stegmayr
- Applicant: Thomas Stegmayr
- Applicant Address: JP Nagano
- Assignee: Minebea Co., Ltd.
- Current Assignee: Minebea Co., Ltd.
- Current Assignee Address: JP Nagano
- Agency: Duane Morris LLP
- Priority: DE102007127505 20070611
- Main IPC: H03K17/687
- IPC: H03K17/687

Abstract:
A high-side semiconductor switch control circuit for switching a positive supply voltage is provided, having a circuit to provide a drive voltage for the high-side semiconductor switch, a driver circuit for driving the high-side semiconductor switch based on the control circuit, wherein both the circuit for providing the drive voltage as well as the driver circuit operate in relation to a floating switching point, an input circuit portion that receives a control signal related to ground, and a level shift circuit portion that is connected between the input circuit portion and the driver circuit portion and set up so as to transform the control signal related to ground into a floating voltage level for the driver circuit portion.
Public/Granted literature
- US20080303580A1 CONTROL CIRCUIT FOR A HIGH-SIDE SEMICONDUCTOR SWITCH FOR SWITCHING A SUPPLY VOLTAGE Public/Granted day:2008-12-11
Information query
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