Invention Grant
- Patent Title: Semiconductor device and booster circuit
- Patent Title (中): 半导体器件和升压电路
-
Application No.: US11426153Application Date: 2006-06-23
-
Publication No.: US07692478B2Publication Date: 2010-04-06
- Inventor: Yoshiharu Ajiki
- Applicant: Yoshiharu Ajiki
- Applicant Address: JP Tokyo
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oliff & Berridge, PLC
- Priority: JP2005-183301 20050623; JP2006-171354 20060621
- Main IPC: H02M3/18
- IPC: H02M3/18 ; G05F3/16 ; H01L21/822 ; H01L27/092

Abstract:
A booster circuit includes a first transistor performing a first on-off operation based on a first control signal and a second transistor performing a second on-off operation based on the first control signal. The first on-off operation and the second on-off operation are reversed. A third transistor performs the first on-off operation based on a second control signal. The second control signal has a phase opposite the first control signal. A fourth transistor is included in a metal oxide semiconductor capacitor.
Public/Granted literature
- US20060290413A1 SEMICONDUCTOR DEVICE AND BOOSTER CIRCUIT Public/Granted day:2006-12-28
Information query