Invention Grant
US07692479B2 Semiconductor integrated circuit device including charge pump circuit capable of suppressing noise
失效
包括能够抑制噪声的电荷泵电路的半导体集成电路装置
- Patent Title: Semiconductor integrated circuit device including charge pump circuit capable of suppressing noise
- Patent Title (中): 包括能够抑制噪声的电荷泵电路的半导体集成电路装置
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Application No.: US11926589Application Date: 2007-10-29
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Publication No.: US07692479B2Publication Date: 2010-04-06
- Inventor: Ikuo Fukami
- Applicant: Ikuo Fukami
- Applicant Address: JP Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-005801 20070115
- Main IPC: H02M3/07
- IPC: H02M3/07 ; G05F3/26
Abstract:
In a semiconductor integrated circuit device including a charge pump circuit flowing an operating current therethrough, a current circuit is adapted to receive the operating current and a substantially constant current and generate an inverse current relative to the operating current and the substantially constant current.
Public/Granted literature
- US20080169863A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE INCLUDING CHARGE PUMP CIRCUIT CAPABLE OF SUPPRESSING NOISE Public/Granted day:2008-07-17
Information query
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