Invention Grant
- Patent Title: Phase shifter with photonic band gap structure using ferroelectric thin film
- Patent Title (中): 具有光子带隙结构的移相器使用铁电薄膜
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Application No.: US11722299Application Date: 2005-12-20
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Publication No.: US07692516B2Publication Date: 2010-04-06
- Inventor: Young-Tae Kim , Han-Cheol Ryu , Min-Hwan Kwak , Seung-Eon Moon , Su-Jae Lee , Kwang-Yong Kang
- Applicant: Young-Tae Kim , Han-Cheol Ryu , Min-Hwan Kwak , Seung-Eon Moon , Su-Jae Lee , Kwang-Yong Kang
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: Kile Goekjian Reed & McManus PLLC
- Priority: KR10-2004-0108981 20041220
- International Application: PCT/KR2005/004390 WO 20051220
- International Announcement: WO2006/068395 WO 20060629
- Main IPC: H01P1/18
- IPC: H01P1/18 ; H01P3/08

Abstract:
Provided are a phase shifter with a photonic band gap (PBG) structure using a ferroelectric thin film. The phase shifter includes a microstrip transmission line acting as a microwave input/output line and a plurality of tunable capacitors arranged in the microstrip transmission line at regular intervals. Electrodes disposed on a substrate apply DC voltages to the plurality of tunable capacitors. Radio frequency (RF) chokes and quarter wavelength radial-stubs are connected between the electrodes and the microstrip transmission line in order to prevent high frequency signals from flowing into a DC bias terminal. A plurality of PBGS are periodically arrayed on a ground plane of the substrate.
Public/Granted literature
- US20080116995A1 Phase Shifter with Photonic Band Gap Structure Using Ferroelectric Thin Film Public/Granted day:2008-05-22
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