Invention Grant
- Patent Title: Solid-state imaging device and method for manufacturing the same
- Patent Title (中): 固态成像装置及其制造方法
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Application No.: US10902885Application Date: 2004-08-02
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Publication No.: US07692720B2Publication Date: 2010-04-06
- Inventor: Kazuhiro Nishida , Hiroshi Maeda , Yoshihisa Negishi , Shunichi Hosaka , Masatoshi Yasumatsu , Eiji Watanabe
- Applicant: Kazuhiro Nishida , Hiroshi Maeda , Yoshihisa Negishi , Shunichi Hosaka , Masatoshi Yasumatsu , Eiji Watanabe
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPP.2003-285132 20030801
- Main IPC: H04N5/225
- IPC: H04N5/225 ; H01L21/00

Abstract:
A solid-state imaging device, comprises: a semiconductor substrate having a first surface; a solid-state imaging element in the first surface of the semiconductor substrate, the solid-state imaging element comprising a light-receiving region; a light-transmission member having a second surface and a third surface, the second surface being opposite to the third surface, wherein the light-transmission member and the first surface of the semiconductor substrate define a gap between the second surface of the light-transmission member and an outer surface of the light-receiving region; and an external connection terminal connected to the solid-state imaging element, wherein a distance between the outer surface of the light-receiving region and the third surface of the light-transmission member is 0.5 mm or more.
Public/Granted literature
- US20050062871A1 Solid-state imaging device and method for manufacturing the same Public/Granted day:2005-03-24
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