Invention Grant
US07692944B2 3-dimensional integrated circuit architecture, structure and method for fabrication thereof 有权
三维集成电路体系结构及其制造方法

3-dimensional integrated circuit architecture, structure and method for fabrication thereof
Abstract:
An integrated circuit design, structure and method for fabrication thereof includes at least one logic device layer and at least two additional separate memory array layers. Each of the logic device layer and the at least two memory array layers is independently optimized for a particular type of logic device or memory device disposed therein. Preferably also disposed within the logic device layer are array sense amplifiers, memory array output drivers and like higher performance circuitry otherwise generally disposed within memory array layer substrates. All layers may be independently powered to provide additional performance enhancement.
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