Invention Grant
- Patent Title: Semiconductor memory device
- Patent Title (中): 半导体存储器件
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Application No.: US12132713Application Date: 2008-06-04
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Publication No.: US07692948B2Publication Date: 2010-04-06
- Inventor: Hidehiro Shiga , Daisaburo Takashima
- Applicant: Hidehiro Shiga , Daisaburo Takashima
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-150077 20070606
- Main IPC: G11C11/22
- IPC: G11C11/22

Abstract:
The sense amp circuit includes a first node given a first, positive constant voltage larger than a fixed potential before reading, a second node given a second, negative constant voltage smaller than the fixed potential before reading, and a third node to be connected to the first and second nodes on reading. A first transistor is connected between the first node and the bit line and operative to turn on when the potential on the bit line becomes smaller than the fixed potential. A second transistor is connected between the second node and the bit line and operative to turn on when the potential on the bit line becomes larger than the fixed potential. A first capacitor is connected between the first node and the fixed potential. A second capacitor is connected between the second node and the fixed potential.
Public/Granted literature
- US20080304309A1 SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2008-12-11
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