Invention Grant
- Patent Title: Multi-bit resistive memory
- Patent Title (中): 多位电阻存储器
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Application No.: US11633210Application Date: 2006-12-04
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Publication No.: US07692949B2Publication Date: 2010-04-06
- Inventor: Thomas Nirschl
- Applicant: Thomas Nirschl
- Applicant Address: US NC Cary
- Assignee: Qimonda North America Corp.
- Current Assignee: Qimonda North America Corp.
- Current Assignee Address: US NC Cary
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A memory includes a first multi-bit resistive memory cell and a single bit resistive memory cell. The single bit resistive memory cell is for storing a bit indicating whether data stored in the first multi-bit resistive memory cell is inverted.
Public/Granted literature
- US20080130351A1 Multi-bit resistive memory Public/Granted day:2008-06-05
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