Invention Grant
- Patent Title: Magnetic random access memory
- Patent Title (中): 磁性随机存取存储器
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Application No.: US12089090Application Date: 2006-09-29
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Publication No.: US07692956B2Publication Date: 2010-04-06
- Inventor: Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
- Applicant: Tadahiko Sugibayashi , Takeshi Honda , Noboru Sakimura
- Applicant Address: JP Tokyo
- Assignee: NEC Corporation
- Current Assignee: NEC Corporation
- Current Assignee Address: JP Tokyo
- Agency: Young & Thompson
- Priority: JP2005-290425 20051003
- International Application: PCT/JP2006/319430 WO 20060929
- International Announcement: WO2007/040167 WO 20070412
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
An MRAM is provided with a memory main body (2) having at least one cell array, and a magnetic field detecting section (4) which detects a magnetic field in the vicinity of the memory main body (2) and outputs the detection signal to the memory main body (2). In the cell array, a memory main body (2), which has a plurality of magnetic memory cells including a multilayer ferri-structure as a free layer, stops a prescribed operation of the memory main body (2), based on the detection signal.
Public/Granted literature
- US20090122597A1 MAGNETIC RANDOM ACCESS MEMORY Public/Granted day:2009-05-14
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