Invention Grant
US07692961B2 Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
有权
用于通过热空穴注入（HHI）和通道热电子（CHE）注入来编程非易失性存储单元的干扰控制的方法，电路和装置
- Patent Title: Method, circuit and device for disturb-control of programming nonvolatile memory cells by hot-hole injection (HHI) and by channel hot-electron (CHE) injection
- Patent Title (中): 用于通过热空穴注入（HHI）和通道热电子（CHE）注入来编程非易失性存储单元的干扰控制的方法，电路和装置
-
Application No.: US11462011Application Date: 2006-08-02
-
Publication No.: US07692961B2Publication Date: 2010-04-06
- Inventor: Boaz Eitan , Natalie Shainsky
- Applicant: Boaz Eitan , Natalie Shainsky
- Applicant Address: IL Netanya
- Assignee: Saifun Semiconductors Ltd.
- Current Assignee: Saifun Semiconductors Ltd.
- Current Assignee Address: IL Netanya
- Agency: Eitan Mehulai, Law Group
- Main IPC: G11C16/34
- IPC: G11C16/34
Abstract:
Programming a NVM memory cell such as an NROM cell by using hot hole injection (HHI), followed by channel hot electron (CHE) injection. CHE injection increases the threshold voltage (Vt) of bits of memory cells that were disturbed (unnecessarily programmed) in HHI programming step. Page Write may be performed using a combination of only HHI, followed by CHE without any Erase.
Public/Granted literature
- US20070196982A1 NROM NON-VOLATILE MODE OF OPERATION Public/Granted day:2007-08-23
Information query
