Invention Grant
US07692968B2 Operation method of non-volatile memory and method of improving coupling interference from nitride-based memory
有权
非易失性存储器的操作方法和改善氮化物存储器耦合干扰的方法
- Patent Title: Operation method of non-volatile memory and method of improving coupling interference from nitride-based memory
- Patent Title (中): 非易失性存储器的操作方法和改善氮化物存储器耦合干扰的方法
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Application No.: US11782149Application Date: 2007-07-24
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Publication No.: US07692968B2Publication Date: 2010-04-06
- Inventor: Yao-Wen Chang , Guan-Wei Wu , Tao-Cheng Lu
- Applicant: Yao-Wen Chang , Guan-Wei Wu , Tao-Cheng Lu
- Applicant Address: TW Hsinchu
- Assignee: MACRONIX International Co., Ltd.
- Current Assignee: MACRONIX International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: J.C. Patents
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
An operation method of a non-volatile memory is provided. The operation method is that a reading operation is performed to a selected nitride-based memory cell, a first positive voltage is applied to a word line adjacent to one side of the selected memory cell and a second positive voltage is applied to another word line adjacent to the other side of the selected memory cell. The operation method of this present invention not only can reduce a coupling interference issue but also can obtain a wider operation window.
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