Invention Grant
US07692970B2 Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same
有权
使用基于年龄的验证电压来提高数据可靠性的闪存器件和操作方法
- Patent Title: Flash memory devices that utilize age-based verify voltages to increase data reliability and methods of operating same
- Patent Title (中): 使用基于年龄的验证电压来提高数据可靠性的闪存器件和操作方法
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Application No.: US11943887Application Date: 2007-11-21
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Publication No.: US07692970B2Publication Date: 2010-04-06
- Inventor: Ki-Tae Park , Yong-Seok Kim , Ki-Nam Kim , Yeong-Taek Lee
- Applicant: Ki-Tae Park , Yong-Seok Kim , Ki-Nam Kim , Yeong-Taek Lee
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec
- Priority: KR10-2006-0116004 20061122
- Main IPC: G11C11/34
- IPC: G11C11/34
Abstract:
Disclosed is a method of verifying a programmed condition of a flash memory device, being comprised of: determining a level of an additional verifying voltage in response to the number of programming/erasing cycles of memory cells; conducting a verifying operation to programmed memory cells with an initial verifying voltage lower than the additional verifying voltage; and selectively conducting an additional verifying operation with the additional verifying voltage to the program-verified memory cells in response to the number of programming/erasing cycles.
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