Invention Grant
US07692977B2 Voltage generator circuit capable of generating different voltages based on operating mode of non-volatile semiconductor memory device
有权
电压发生器电路能够基于非易失性半导体存储器件的工作模式产生不同的电压
- Patent Title: Voltage generator circuit capable of generating different voltages based on operating mode of non-volatile semiconductor memory device
- Patent Title (中): 电压发生器电路能够基于非易失性半导体存储器件的工作模式产生不同的电压
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Application No.: US11837207Application Date: 2007-08-10
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Publication No.: US07692977B2Publication Date: 2010-04-06
- Inventor: Jin-Kook Kim , Jin-Yub Lee
- Applicant: Jin-Kook Kim , Jin-Yub Lee
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2006-0082378 20060829
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
High voltage generator circuits and methods for operating non-volatile semiconductor memory devices are provided for use with non-volatile memory such as FLASH memory devices, to selectively generate different types of control voltages for various operating modes of non-volatile memory devices.
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