In a memory readout circuit for use in a phase-change memory device comprising phase-change elements as memory cells, a sense amplifier sets readout voltage, which is applied to a selected phase-change element selected among the phase-change elements by a column selecting switch, to voltage equal to or higher than hold voltage of the selected phase-change element but lower than transition voltage of the selected phase-change element in a readout cycle. The selected phase-change element is read out as a dynamic state in the case where the selected phase-change element is in a set state.