Invention Grant
US07692989B2 Non-volatile memory having a static verify-read output data path
有权
具有静态验证读输出数据路径的非易失性存储器
- Patent Title: Non-volatile memory having a static verify-read output data path
- Patent Title (中): 具有静态验证读输出数据路径的非易失性存储器
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Application No.: US11740331Application Date: 2007-04-26
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Publication No.: US07692989B2Publication Date: 2010-04-06
- Inventor: Padmaraj Sanjeevarao , David W. Chrudimsky
- Applicant: Padmaraj Sanjeevarao , David W. Chrudimsky
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Daniel D. Hill; James L. Clingan, Jr.
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A memory has first and second memory arrays and first and second sense amplifiers coupled to the first and second memory arrays, respectively. A verify data line is coupled to first outputs of the first sense amplifier and the second sense amplifier as well as to a program/erase controller. The verify data line has a first logic circuit having a first input coupled to the first output of the first sense amplifier and an output. A second logic circuit has a first input coupled to the output of the first logic circuit, a second input coupled to the first output of the second sense amplifier, and an output. A global data line is coupled to a second output of the first sense amplifier and a second output of the second sense amplifier. A global sense amplifier is coupled to the global data line.
Public/Granted literature
- US20080266974A1 NON-VOLATILE MEMORY HAVING A STATIC VERIFY-READ OUTPUT DATA PATH Public/Granted day:2008-10-30
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