Invention Grant
- Patent Title: Semiconductor storage device in which inactive word line potential is set
- Patent Title (中): 设置了无效字线电位的半导体存储装置
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Application No.: US11984052Application Date: 2007-11-13
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Publication No.: US07692992B2Publication Date: 2010-04-06
- Inventor: Yasushi Matsubara
- Applicant: Yasushi Matsubara
- Applicant Address: JP Tokyo
- Assignee: Elpida Memory, Inc.
- Current Assignee: Elpida Memory, Inc.
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2006-335244 20061213
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
A potential level of a word line when it is inactive is made different between during a self-refresh operation and during other than the self-refresh operation. The potential level is set to a ground potential GND during the self-refresh operation and set to a negative potential during other than the self-refresh operation.
Public/Granted literature
- US20080144416A1 Semiconductor storage device Public/Granted day:2008-06-19
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