Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US12165979Application Date: 2008-07-01
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Publication No.: US07692997B2Publication Date: 2010-04-06
- Inventor: Masashi Horiguchi , Mitsuru Hiraki
- Applicant: Masashi Horiguchi , Mitsuru Hiraki
- Applicant Address: JP
- Assignee: Renesas Technology Corp.
- Current Assignee: Renesas Technology Corp.
- Current Assignee Address: JP
- Agency: Antonelli, Terry, Stout & Kraus, LLP
- Priority: JP2004-216662 20040726
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
A semiconductor integrated circuit device with reduced consumption current is provided. A first step-down circuit stationarily forms internal voltage lower than supply voltage supplied through an external terminal. A second step-down circuit is switched between first mode and second mode according to control signals. In first mode, the internal voltage is formed from the supply voltage supplied through the external terminal and is outputted through a second output terminal. In second mode, operating current for a control system that forms the internal voltage is interrupted and an output high impedance state is established. The first output terminal of the first step-down circuit and the second output terminal of the second step-down circuit are connected in common, and the internal voltage is supplied to internal circuits.
Public/Granted literature
- US20080290932A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2008-11-27
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