Invention Grant
US07692999B2 Nonvolatile memory and semiconductor device including nonvolatile memory 有权
非易失性存储器和包括非易失性存储器的半导体器件

Nonvolatile memory and semiconductor device including nonvolatile memory
Abstract:
An object is to provide a nonvolatile memory with reduced power consumption. The nonvolatile memory includes a memory element that has a low resistance state and a high resistance state, a writing circuit, a resistance element, a voltage source input terminal that inputs a writing voltage to the writing circuit, a bit line driver circuit that selects whether the memory element is connected to the writing circuit, and a word line driver circuit that selects whether or not writing is done in the memory element. With such as structure, power consumption during writing can be reduced, and a nonvolatile memory with low power consumption can be realized. Further, with such a nonvolatile memory, an active type wireless tag with a long lifetime of a battery or a passive type wireless tag with a wide communication range in which writing to a memory is possible, can be realized.
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