Invention Grant
US07692999B2 Nonvolatile memory and semiconductor device including nonvolatile memory
有权
非易失性存储器和包括非易失性存储器的半导体器件
- Patent Title: Nonvolatile memory and semiconductor device including nonvolatile memory
- Patent Title (中): 非易失性存储器和包括非易失性存储器的半导体器件
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Application No.: US12003280Application Date: 2007-12-21
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Publication No.: US07692999B2Publication Date: 2010-04-06
- Inventor: Kiyoshi Kato
- Applicant: Kiyoshi Kato
- Applicant Address: unknown Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd
- Current Assignee Address: unknown Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-347278 20061225
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
An object is to provide a nonvolatile memory with reduced power consumption. The nonvolatile memory includes a memory element that has a low resistance state and a high resistance state, a writing circuit, a resistance element, a voltage source input terminal that inputs a writing voltage to the writing circuit, a bit line driver circuit that selects whether the memory element is connected to the writing circuit, and a word line driver circuit that selects whether or not writing is done in the memory element. With such as structure, power consumption during writing can be reduced, and a nonvolatile memory with low power consumption can be realized. Further, with such a nonvolatile memory, an active type wireless tag with a long lifetime of a battery or a passive type wireless tag with a wide communication range in which writing to a memory is possible, can be realized.
Public/Granted literature
- US20080151602A1 Nonvolatile memory and semiconductor device including nonvolatile memory Public/Granted day:2008-06-26
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