Invention Grant
- Patent Title: Semiconductor laser device and method for fabricating the same
- Patent Title (中): 半导体激光器件及其制造方法
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Application No.: US11918123Application Date: 2006-12-14
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Publication No.: US07693202B2Publication Date: 2010-04-06
- Inventor: Satoshi Murasawa , Toru Takayama , Hisashi Nakayama , Yasuhiro Fujimoto , Isao Kidoguchi
- Applicant: Satoshi Murasawa , Toru Takayama , Hisashi Nakayama , Yasuhiro Fujimoto , Isao Kidoguchi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-096727 20060331
- International Application: PCT/JP2006/324953 WO 20061214
- International Announcement: WO2007/116564 WO 20071018
- Main IPC: H01S5/00
- IPC: H01S5/00
Abstract:
In a monolithic dual wavelength laser device in which an infrared laser part 100 and a red laser part 130 are built on one n-type GaAs substrate 101, a p-type first cladding layer 105 of the infrared laser part 100 and a p-type first cladding layer 135 of the red laser part 130 are made of the same material and have different impurity concentrations.
Public/Granted literature
- US20090086780A1 Semiconductor Laser Device and Method for Fabricating the Same Public/Granted day:2009-04-02
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