Invention Grant
US07693206B2 Semiconductor laser device including laser array or stack first collimator, path rotator, and an optical element
有权
半导体激光装置包括激光阵列或叠层第一准直仪,路径旋转器和光学元件
- Patent Title: Semiconductor laser device including laser array or stack first collimator, path rotator, and an optical element
- Patent Title (中): 半导体激光装置包括激光阵列或叠层第一准直仪,路径旋转器和光学元件
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Application No.: US10555923Application Date: 2004-05-07
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Publication No.: US07693206B2Publication Date: 2010-04-06
- Inventor: Yujin Zheng , Hirofumi Kan , Xin Gao
- Applicant: Yujin Zheng , Hirofumi Kan , Xin Gao
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2003-132198 20030509; JP2003-167983 20030612; JP2003-284464 20030731; JP2003-419735 20031217; JP2004-020338 20040128
- International Application: PCT/JP2004/006503 WO 20040507
- International Announcement: WO2004/100331 WO 20041118
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S3/08

Abstract:
This invention relates to semiconductor laser apparatus with a structure for reducing the divergence angle of output light and for narrowing the spectral width. The semiconductor laser apparatus has at least a semiconductor laser array, a collimator lens, a path rotator, and an optical element with a reflecting function. The collimator lens collimates a plurality of laser beams from the semiconductor laser array, in a predetermined direction. The path rotator outputs each beam collimated in the predetermined direction, with a predetermined divergence angle in the predetermined direction in a state in which a transverse section of the beam is rotated by about 90°. The optical element is arranged at a position where at least a part of each beam from the path rotator arrives, and constitutes at least a part of an external resonator. This optical element reflects a part of each beam from the path rotator to return the reflected part of each beam to the active layer in the semiconductor laser array.
Public/Granted literature
- US20070064754A1 Semiconductor laser device Public/Granted day:2007-03-22
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