Invention Grant
- Patent Title: Salicide structures for heat-influenced semiconductor applications
- Patent Title (中): 热影响半导体应用的杀菌剂结构
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Application No.: US12201791Application Date: 2008-08-29
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Publication No.: US07693354B2Publication Date: 2010-04-06
- Inventor: Daniel N. Carothers
- Applicant: Daniel N. Carothers
- Applicant Address: US NH Nashua
- Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee: BAE Systems Information and Electronic Systems Integration Inc.
- Current Assignee Address: US NH Nashua
- Agency: Grossman, Tucker, Perreault & Pfleger, PLLC
- Agent Neil F. Maloney
- Main IPC: G02F1/01
- IPC: G02F1/01 ; G02B6/12
Abstract:
A salicide heater structure for use in thermo-optic and other heat-influenced semiconductor devices is disclosed. In one example embodiment, a system is provided that includes a silicon substrate, and a salicide heating element formed on the substrate, for delivering heat radiation to a heat-influenced semiconductor device. Another example embodiment is a salicide semiconductor system that includes a silicon substrate and a salicide structure formed on the substrate, wherein the salicide structure is for delivering heat radiation to a heat-influenced semiconductor device.
Public/Granted literature
- US20100054653A1 SALICIDE STRUCTURES FOR HEAT-INFLUENCED SEMICONDUCTOR APPLICATIONS Public/Granted day:2010-03-04
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