Invention Grant
US07693363B2 Plasmostor: a-metal-oxide-si field effect plasmonic modulator
失效
喷砂机:a-metal-oxide-si场效应等离子体激元调制器
- Patent Title: Plasmostor: a-metal-oxide-si field effect plasmonic modulator
- Patent Title (中): 喷砂机:a-metal-oxide-si场效应等离子体激元调制器
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Application No.: US12410419Application Date: 2009-03-24
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Publication No.: US07693363B2Publication Date: 2010-04-06
- Inventor: Jennifer A. Dionne , Kenneth A. Diest , Luke Sweatlock , Harry A. Atwater
- Applicant: Jennifer A. Dionne , Kenneth A. Diest , Luke Sweatlock , Harry A. Atwater
- Applicant Address: US CA Pasadena
- Assignee: California Institute of Technology
- Current Assignee: California Institute of Technology
- Current Assignee Address: US CA Pasadena
- Agency: Milstein Zhang & Wu LLC
- Agent Joseph B. Milstein
- Main IPC: G02B6/12
- IPC: G02B6/12

Abstract:
The invention is a system and method for performing all-optical modulation. A semiconductor layer having a defined thickness has an insulator adjacent one surface of the semiconductor. Conductive layers are provided adjacent the semiconductor layer and the insulator. A photodetector is provided to generate an electric field across the conductive layers in response to an input optical gate signal. An input optical signal is modulated by interaction with a plasmon wave generated at the semiconductor/conductive layer interface. By defining the thickness of the semiconductor layer, a desired wavelength of light supports the plasmon waves. Operation of the all-optical modulator requires the provision of an input optical signal of a desired wavelength and the provision of a gate optical signal. An output optical signal is recovered and can be used to store, display or transmit information, for example over a fiber optic communication system, such as a telecommunication system.
Public/Granted literature
- US20090273820A1 PLASMOSTOR: A-METAL-OXIDE-SI FIELD EFFECT PLASMONIC MODULATOR Public/Granted day:2009-11-05
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