Invention Grant
- Patent Title: Method and system for providing a spin tunneling magnetic element having a crystalline barrier layer
- Patent Title (中): 提供具有结晶阻挡层的自旋隧穿磁性元件的方法和系统
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Application No.: US11643446Application Date: 2006-12-21
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Publication No.: US07695761B1Publication Date: 2010-04-13
- Inventor: Yong Shen , Qunwen Leng
- Applicant: Yong Shen , Qunwen Leng
- Applicant Address: US CA Fremont
- Assignee: Western Digital (Fremont), LLC
- Current Assignee: Western Digital (Fremont), LLC
- Current Assignee Address: US CA Fremont
- Main IPC: B05D5/12
- IPC: B05D5/12
Abstract:
The method and system for providing a spin tunneling element are disclosed. The method and system include depositing a pinned layer, a barrier layer, and a free layer. The barrier layer has a first crystal structure and a texture. The free layer includes a first ferromagnetic layer and a second ferromagnetic layer. The first ferromagnetic is adjacent to the second ferromagnetic layer and between the second ferromagnetic layer and the barrier layer. The first ferromagnetic layer has the first crystal structure and the texture, while the second ferromagnetic layer has a second crystal structure different from the first crystal structure.
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