Invention Grant
- Patent Title: Method for cleaning process chamber of substrate processing apparatus, substrate processing apparatus, and method for processing substrate
- Patent Title (中): 基板处理装置的清洗处理室的方法，基板处理装置以及基板的处理方法
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Application No.: US10587394Application Date: 2005-01-27
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Publication No.: US07695763B2Publication Date: 2010-04-13
- Inventor: Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
- Applicant: Shuuichi Ishizuka , Masaru Sasaki , Tetsuro Takahashi , Koji Maekawa
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-020157 20040128
- International Application: PCT/JP2005/001057 WO 20050127
- International Announcement: WO2005/074016 WO 20050811
- Main IPC: C23C16/00
- IPC: C23C16/00 ; B08B6/00 ; B08B9/00
Abstract:
In a substrate processing apparatus configured to perform a predetermined process on a target substrate accommodated in a process chamber, the process chamber is cleaned by alternately performing an operation of generating plasma of a gas containing oxygen within the process chamber, and an operation of generating plasma of a gas containing nitrogen within the process chamber.
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