Invention Grant
US07695765B1 Methods for producing low-stress carbon-doped oxide films with improved integration properties
有权
用于生产低应力碳掺杂氧化物膜的方法，具有改进的积分性能
- Patent Title: Methods for producing low-stress carbon-doped oxide films with improved integration properties
- Patent Title (中): 用于生产低应力碳掺杂氧化物膜的方法，具有改进的积分性能
-
Application No.: US10987208Application Date: 2004-11-12
-
Publication No.: US07695765B1Publication Date: 2010-04-13
- Inventor: Keith Fox , Carole Mars , Willis Kirkpatrick , Easwar Srinivasan
- Applicant: Keith Fox , Carole Mars , Willis Kirkpatrick , Easwar Srinivasan
- Applicant Address: US CA San Jose
- Assignee: Novellus Systems, Inc.
- Current Assignee: Novellus Systems, Inc.
- Current Assignee Address: US CA San Jose
- Agency: Weaver Austin Villeneuve & Sampson LLP
- Main IPC: C23C16/40
- IPC: C23C16/40
Abstract:
Methods of preparing a carbon doped oxide (CDO) layer with a low dielectric constant (
Information query
IPC分类:
