Invention Grant
- Patent Title: Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret
- Patent Title (中): 使用电子或光束模糊的连续倾斜相位架构制造技术,用于单相位移掩模
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Application No.: US11894795Application Date: 2007-08-20
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Publication No.: US07695872B2Publication Date: 2010-04-13
- Inventor: Matt F. Vernon , Wen-Hao Cheng
- Applicant: Matt F. Vernon , Wen-Hao Cheng
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Fish & Richardson P.C.
- Main IPC: G03F1/00
- IPC: G03F1/00

Abstract:
A phase shift mask may include boundaries between phase shift regions with continuous sloped phase edges. The continuous sloped phase edges may be produced by introducing a predetermined degree of defocus into a beam used during production of the mask to image the pattern on the mask. Such a phase shift mask may be “trimless”, i.e., not require a corresponding binary “trim” mask for a second exposure to remove phase conflicts after exposure with the phase shift mask.
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