Invention Grant
US07695872B2 Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret 失效
使用电子或光束模糊的连续倾斜相位架构制造技术,用于单相位移掩模

  • Patent Title: Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret
  • Patent Title (中): 使用电子或光束模糊的连续倾斜相位架构制造技术,用于单相位移掩模
  • Application No.: US11894795
    Application Date: 2007-08-20
  • Publication No.: US07695872B2
    Publication Date: 2010-04-13
  • Inventor: Matt F. VernonWen-Hao Cheng
  • Applicant: Matt F. VernonWen-Hao Cheng
  • Applicant Address: US CA Santa Clara
  • Assignee: Intel Corporation
  • Current Assignee: Intel Corporation
  • Current Assignee Address: US CA Santa Clara
  • Agency: Fish & Richardson P.C.
  • Main IPC: G03F1/00
  • IPC: G03F1/00
Continuous sloped phase edge architecture fabrication technique using electron or optical beam blur for single phase shift mask ret
Abstract:
A phase shift mask may include boundaries between phase shift regions with continuous sloped phase edges. The continuous sloped phase edges may be produced by introducing a predetermined degree of defocus into a beam used during production of the mask to image the pattern on the mask. Such a phase shift mask may be “trimless”, i.e., not require a corresponding binary “trim” mask for a second exposure to remove phase conflicts after exposure with the phase shift mask.
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