Invention Grant
- Patent Title: Use of modeled parameters for real-time semiconductor process metrology applied to semiconductor processes
- Patent Title (中): 使用模拟参数实时半导体工艺测量应用于半导体工艺
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Application No.: US11409308Application Date: 2006-04-20
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Publication No.: US07695984B1Publication Date: 2010-04-13
- Inventor: Joseph R Monkowski , Barton Lane
- Applicant: Joseph R Monkowski , Barton Lane
- Applicant Address: US CA Pleasanton
- Assignee: Pivotal Systems Corporation
- Current Assignee: Pivotal Systems Corporation
- Current Assignee Address: US CA Pleasanton
- Agency: Townsend and Townsend and Crew LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Method and system for detecting endpoint for a plasma etch process are provided. In accordance with one embodiment, the method provides a semiconductor substrate having a film to be processed thereon. The film is processed in a plasma environment during a time period to provide for device structures. Information associated with the plasma process is collected. The information is characterized by a first signal intensity. Information on a change in the first signal intensity is extracted. The change in the first signal intensity has a second signal intensity. The change in signal intensity at the second signal intensity is associated to an endpoint of processing the film in the plasma environment. The second signal intensity may be about 0.25% and less of the first signal intensity.
Information query
IPC分类:
