Invention Grant
- Patent Title: Image sensor and method of fabricating the same
- Patent Title (中): 图像传感器及其制造方法
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Application No.: US11900319Application Date: 2007-09-10
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Publication No.: US07695995B2Publication Date: 2010-04-13
- Inventor: Joon Hwang
- Applicant: Joon Hwang
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: The Law Offices of Andrew D. Fortney
- Agent Andrew D. Fortney
- Priority: KR10-2006-0093575 20060926
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Disclosed is an image sensor. The image sensor includes a lower structure having a photodiode and an interconnection, a passivation layer on the lower structure, a thermo-setting resin layer on the passivation layer, a color filter array on the thermo-setting resin layer, a micro-lens array on the color filter array, and a Low Temperature Oxide (LTO) layer on the micro-lens array.
Public/Granted literature
- US20080073736A1 Image sensor and method of fabricating the same Public/Granted day:2008-03-27
Information query
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