Invention Grant
US07695998B2 Methods for making and using high-mobility inorganic semiconductive films
失效
制造和使用高迁移率无机半导体膜的方法
- Patent Title: Methods for making and using high-mobility inorganic semiconductive films
- Patent Title (中): 制造和使用高迁移率无机半导体膜的方法
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Application No.: US11173521Application Date: 2005-07-02
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Publication No.: US07695998B2Publication Date: 2010-04-13
- Inventor: David Punsalan , John Thompson
- Applicant: David Punsalan , John Thompson
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: H01L51/40
- IPC: H01L51/40
Abstract:
Inorganic semiconductive films are made by depositing a suitable precursor substance upon a substrate, irradiating the precursor substance with electromagnetic radiation to form a nascent film, and heating the nascent film at a predetermined temperature to form an inorganic semiconductive film.
Public/Granted literature
- US20070003877A1 Inorganic semiconductive films and methods therefor Public/Granted day:2007-01-04
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