Invention Grant
- Patent Title: Production method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US11513062Application Date: 2006-08-31
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Publication No.: US07695999B2Publication Date: 2010-04-13
- Inventor: Akane Masumoto , Shintetsu Go , Tomonari Nakayama , Toshinobu Ohnishi
- Applicant: Akane Masumoto , Shintetsu Go , Tomonari Nakayama , Toshinobu Ohnishi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2005-258566 20050906; JP2006-066319 20060310
- Main IPC: H01L51/40
- IPC: H01L51/40 ; H01L51/00

Abstract:
Provided is a method of producing a semiconductor device having an organic semiconductor layer, which includes the steps of providing a crystallization promoting layer on a substrate; providing an organic semiconductor precursor on the crystallization promoting layer; and applying light energy and thermal energy simultaneously to the organic semiconductor precursor to form a layer containing an organic semiconductor. Thereby, an organic semiconductor device is provided which is low cost and has excellent durability.
Public/Granted literature
- US20070085072A1 Production method of semiconductor device Public/Granted day:2007-04-19
Information query
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