Semiconductor capacitor structure and method to form same

Invention Grant

US07696042B2 Semiconductor capacitor structure and method to form same 失效

Title translation: 半导体电容器的结构与方法形成相同

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Patent Title: Semiconductor capacitor structure and method to form same
Patent Title (中): 半导体电容器的结构与方法形成相同
Application No.: US11495655

Application Date: 2006-07-28
Publication No.: US07696042B2

Publication Date: 2010-04-13
Inventor: Gurtej S. Sandhu
Applicant: Gurtej S. Sandhu
Applicant Address: US ID Boise
Assignee: Micron Technology, Inc.
Current Assignee: Micron Technology, Inc.
Current Assignee Address: US ID Boise
Main IPC: H01L21/8242
IPC: H01L21/8242 ; H01L21/4763

Semiconductor capacitor structure and method to form same

Abstract:

A semiconductor capacitor structure comprising sidewalls of conductive hemispherical grained material, a base of metal silicide material, and a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material. The semiconductor capacitor structure is fabricated by forming a base of metal silicide material along the sidewalls of an insulative material having an opening therein, forming sidewalls of conductive hemispherical grained material on the metal silicide material, and forming a metal nitride material overlying the conductive hemispherical grained material and the metal silicide material.

Abstract(Chinese):

一种半导体电容器结构，包括导电半球形颗粒材料的侧壁，金属硅化物材料的基底和覆盖在导电半球形颗粒材料和金属硅化物材料上的金属氮化物材料。半导体电容器结构通过沿着其中具有开口的绝缘材料的侧壁形成金属硅化物材料的基底来制造，在金属硅化物材料上形成导电半球状晶粒材料的侧壁，并且形成覆盖导电半球形晶粒的金属氮化物材料材料和金属硅化物材料。

Public/Granted literature

US20070020870A1 Semiconductor capacitor structure and method to form same Public/Granted day:2007-01-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8239	........存储器结构
H01L21/8242	.........动态随机存取存储结构（DRAM）