Invention Grant
- Patent Title: Method for co-alignment of mixed optical and electron beam lithographic fabrication levels
- Patent Title (中): 混合光学和电子束光刻制造水平的共同对准方法
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Application No.: US11618974Application Date: 2007-01-02
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Publication No.: US07696057B2Publication Date: 2010-04-13
- Inventor: David Michael Fried , John Michael Hergenrother , Sharee Jane McNab , Michael J. Rooks , Anna Topol
- Applicant: David Michael Fried , John Michael Hergenrother , Sharee Jane McNab , Michael J. Rooks , Anna Topol
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schmeiser, Olsen & Watts
- Agent Louis J. Percello
- Main IPC: H01L21/76
- IPC: H01L21/76

Abstract:
A method for aligning a first set of features of a fabrication level of an integrated circuit chip to an electron beam alignment target including a high atomic weight layer formed in a substrate and forming the first set of features using electron beam lithography and for aligning a second set of features of the same fabrication level of the integrated circuit chip to an optical alignment target formed in the substrate and forming the second set of features using photolithography, the optical alignment target itself is aligned to the electron beam alignment target. Also a method of forming and a structure of the electron beam alignment target.
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