Invention Grant
US07696062B2 Method of batch integration of low dielectric substrates with MMICs
有权
低电介质衬底与MMIC的批量集成方法
- Patent Title: Method of batch integration of low dielectric substrates with MMICs
- Patent Title (中): 低电介质衬底与MMIC的批量集成方法
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Application No.: US11828147Application Date: 2007-07-25
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Publication No.: US07696062B2Publication Date: 2010-04-13
- Inventor: Patty Pei-Ling Chang-Chien , Chi Kong Cheung , Melanie Sachiko Yajima , Xianglin Zeng
- Applicant: Patty Pei-Ling Chang-Chien , Chi Kong Cheung , Melanie Sachiko Yajima , Xianglin Zeng
- Applicant Address: US CA Los Angeles
- Assignee: Northrop Grumman Systems Corporation
- Current Assignee: Northrop Grumman Systems Corporation
- Current Assignee Address: US CA Los Angeles
- Agency: Miller IP Group, PLC
- Agent John A. Miller
- Main IPC: H01L21/30
- IPC: H01L21/30

Abstract:
A method for mounting a dielectric substrate to a semiconductor substrate, such as mounting a dielectric antenna substrate to an MMIC semiconductor substrate. The method includes providing a thin dielectric antenna substrate having metallized layers on opposing sides. In one embodiment, carrier wafers are used to handle and maintain the dielectric substrate in a flat configuration as the metallized layers are patterned. The dielectric substrate is sealed to the semiconductor substrate using a low temperature bonding process. In an alternate embodiment, the metallized layers on the dielectric substrate are patterned simultaneously so as to prevent the substrate from curling.
Public/Granted literature
- US20090029554A1 Method of Batch Integration of Low Dielectric Substrates with MMICs Public/Granted day:2009-01-29
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