Invention Grant
- Patent Title: Methods for forming a through via
- Patent Title (中): 形成通孔的方法
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Application No.: US11870624Application Date: 2007-10-11
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Publication No.: US07696064B2Publication Date: 2010-04-13
- Inventor: Qing Gan , Anthony LoBianco
- Applicant: Qing Gan , Anthony LoBianco
- Applicant Address: US MA Woburn
- Assignee: Skyworks Solutions, Inc.
- Current Assignee: Skyworks Solutions, Inc.
- Current Assignee Address: US MA Woburn
- Main IPC: H01L21/46
- IPC: H01L21/46 ; H01L21/302
Abstract:
A through via is constructed in a two-stage process. A void in a portion of the depth of the substrate is filled from a first surface of the semiconductor substrate creating an enclosed volume within the substrate. Thereafter, the enclosed volume is exposed and the remaining portion of the void is filled.
Public/Granted literature
- US20090098731A1 Methods for Forming a Through Via Public/Granted day:2009-04-16
Information query
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