Invention Grant
- Patent Title: Method of manufacturing a semiconductor device by forming separation regions which do not extend to the peripherals of a substrate, and structures thereof
- Patent Title (中): 通过形成不延伸到基板的外围的分离区域制造半导体器件的方法及其结构
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Application No.: US11222895Application Date: 2005-09-08
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Publication No.: US07696065B2Publication Date: 2010-04-13
- Inventor: Nobuhiko Sato , Shigeru Kido , Kazutaka Momoi
- Applicant: Nobuhiko Sato , Shigeru Kido , Kazutaka Momoi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc. IP Division
- Priority: JP2004-261567 20040908
- Main IPC: H01L21/30
- IPC: H01L21/30 ; H01L21/46
Abstract:
A semiconductor device manufacturing method is disclosed. A semiconductor substrate having a separation region and a semiconductor region which covers the separation region entirely is prepared. One or a plurality of circuit elements are formed in the semiconductor region. The semiconductor substrate is split at the separation region.
Public/Granted literature
- US20060049487A1 Semiconductor device and method of manufacturing the same Public/Granted day:2006-03-09
Information query
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