Invention Grant
- Patent Title: Wafer dividing method
- Patent Title (中): 晶圆分割法
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Application No.: US12073652Application Date: 2008-03-07
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Publication No.: US07696069B2Publication Date: 2010-04-13
- Inventor: Masaru Nakamura
- Applicant: Masaru Nakamura
- Applicant Address: JP Tokyo
- Assignee: Disco Corporation
- Current Assignee: Disco Corporation
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2007-065253 20070314
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Disclosed herein is a method of dividing a wafer having a plurality of streets which are formed in a lattice pattern on the front surface and having devices which are formed in a plurality of areas sectioned by the plurality of streets into individual devices along the streets. The method includes applying a laser beam of a wavelength having permeability for the wafer along the streets to form a deteriorated layer along the streets in the inside of the wafer; forming a groove in areas corresponding to the streets from the rear side of the wafer; and exerting external force to the wafer where the deteriorated layer and the groove have been formed along the streets to divide the wafer into individual devices along the streets.
Public/Granted literature
- US20080227272A1 Wafer dividing method Public/Granted day:2008-09-18
Information query
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