Invention Grant
- Patent Title: Method of fabricating flash memory device
- Patent Title (中): 制造闪存设备的方法
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Application No.: US11955349Application Date: 2007-12-12
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Publication No.: US07696076B2Publication Date: 2010-04-13
- Inventor: Woo Yung Jung , Choi Dong Kim , Sang Min Kim
- Applicant: Woo Yung Jung , Choi Dong Kim , Sang Min Kim
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Townsend and Townsend and Crew LLP
- Priority: KR10-2007-0045993 20070511
- Main IPC: H01L21/31
- IPC: H01L21/31
Abstract:
The present invention relates to a method of fabricating a flash memory device. In a method according to an aspect of the present invention, a first hard mask film is formed over a semiconductor laminate. A plurality of first hard mask patterns are formed by etching an insulating layer for a hard mask. Spacers are formed on top surfaces and sidewalls of the plurality of first hard mask patterns. A second hard mask film is formed over a total surface including the spacers. Second hard mask patterns are formed in spaces between the spacers by performing an etch process so that a top surface of the spacers is exposed. The spacers are removed. Accordingly, gate patterns can be formed by employing hard mask patterns having a pitch of exposure equipment resolutions or less.
Public/Granted literature
- US20080280431A1 METHOD OF FABRICATING FLASH MEMORY DEVICE Public/Granted day:2008-11-13
Information query
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