Invention Grant
- Patent Title: Method for producing an electrical contact for an optoelectronic semiconductor chip
- Patent Title (中): 光电子半导体芯片的电接点的制造方法
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Application No.: US11654224Application Date: 2007-01-16
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Publication No.: US07696078B2Publication Date: 2010-04-13
- Inventor: Wilhelm Stein , Michael Fehrer , Johannes Baur , Matthias Winter , Andreas Ploessl , Stephan Kaiser , Berthold Hahn , Franz Eberhard
- Applicant: Wilhelm Stein , Michael Fehrer , Johannes Baur , Matthias Winter , Andreas Ploessl , Stephan Kaiser , Berthold Hahn , Franz Eberhard
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontant Lieberman & Pavane LLP
- Priority: DE10308325 20030226; DE10350707 20031030
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method for producing an electrical contact of an optoelectronic semiconductor chip (1), comprising providing a mirror layer (2), comprised of a metal or metal alloy, over the semiconductor chip; providing a protective layer (3) over said mirror layer; providing a layer sequence of a barrier layer and a coupling layer (5) over said protective layer; and providing a solder layer (8) over said layer sequence.
Public/Granted literature
- US20070117235A1 Method for producing an electrical contact for an optoelectronic semiconductor chip Public/Granted day:2007-05-24
Information query
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