Invention Grant
- Patent Title: Passivated thin film and method of producing same
- Patent Title (中): 钝化薄膜及其制造方法
-
Application No.: US11125976Application Date: 2005-05-10
-
Publication No.: US07696089B1Publication Date: 2010-04-13
- Inventor: Lonnie G. Johnson , Davorin Babic
- Applicant: Lonnie G. Johnson , Davorin Babic
- Applicant Address: US GA Atlanta
- Assignee: Johnson Research & Development Co., Inc.
- Current Assignee: Johnson Research & Development Co., Inc.
- Current Assignee Address: US GA Atlanta
- Agency: Baker Donelson
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method of producing a passivated thin film material is disclosed wherein an insulating thin film layer (10), having pinholes (12) therein, is positioned upon an underlying electrically conductive substrate (11). The thin film layer is then electroplated so that the pinholes are filled with a reactive metal. The thin film layer and substrate are then immersed within a silicon doped tetramethylammonium hydroxide (TMAH) solution. Excess silica within the solution precipitates onto the top surfaces of the aluminum plugs (13) to form an electrically insulative cap which electrically insulates the top of the aluminum plug. As an alternative, the previously described metal plugs may be anodized so that at least a portion thereof becomes an oxidized metal which is electrically insulative.
Information query
IPC分类: