Invention Grant
- Patent Title: Manufacturing method of semiconductor device
- Patent Title (中): 半导体器件的制造方法
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Application No.: US11600068Application Date: 2006-11-16
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Publication No.: US07696099B2Publication Date: 2010-04-13
- Inventor: Masaru Yamada , Akihiko Tsudumitani
- Applicant: Masaru Yamada , Akihiko Tsudumitani
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2005-335782 20051121
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A first film and a second film are formed on a semiconductor substrate in this order. A resist pattern is formed on the second film. An opening is formed by removing the second film exposed between the resist pattern at a state where the second film remains on the bottom. A first removal preventing film is formed on the side wall of the opening and the residual film is removed at a state where the projecting part of the second film protruding from the sidewall to the opening remains. The first film exposed in the opening is removed. A second removal preventing film is formed on the first removal preventing film and the surface of the semiconductor substrate exposed in the opening is removed at a state where the projecting part of the semiconductor substrate protruding from the side wall to the opening remains and a round part is formed at the projecting part of the semiconductor substrate. The semiconductor substrate exposed in the opening is further removed.
Public/Granted literature
- US20070196965A1 Manufacturing method of semiconductor device Public/Granted day:2007-08-23
Information query
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