Invention Grant
- Patent Title: Process for increasing feature density during the manufacture of a semiconductor device
- Patent Title (中): 在制造半导体器件期间增加特征密度的方法
-
Application No.: US11263885Application Date: 2005-11-01
-
Publication No.: US07696101B2Publication Date: 2010-04-13
- Inventor: Mingtao Li
- Applicant: Mingtao Li
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461
Abstract:
A method used during the manufacture of a semiconductor device comprises the formation of a first patterned layer having individual features of a first density. Through the formation and etching of various layers, for example conformal layers and a spun-on layer, a second patterned layer results which comprises individual features of a second density, which is about three times the first density. An in-process semiconductor apparatus formed using the method, and a system comprising the semiconductor apparatus formed according to the method, is also described.
Public/Granted literature
- US20070099431A1 Process for increasing feature density during the manufacture of a semiconductor device Public/Granted day:2007-05-03
Information query
IPC分类:
